1/8 june 2003 sts1NK60Z n-channel 600v - 13 w -0.25a-so-8 zener-protected supermesh? power mosfet typical r ds (on) = 13 w extremely high dv/dt capability esd improved capability 100% avalanche tested new high voltage benchmark gate charge minimized description the supermesh? series is obtained through an extreme optimization of sts well established strip- based powermesh? layout. in addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. such series comple- ments st full range of high voltage mosfets in- cluding revolutionary mdmesh? products. applications ac adaptors and battery chargers swith mode power supplies (smps) ordering information type v dss r ds(on) i d pw sts1NK60Z 600 v < 15 w 0.25 a 2 w sales type marking package packaging sts1NK60Z s1NK60Z so-8 tape & reel so-8 internal schematic diagram
sts1NK60Z 2/8 absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 0.3a, di/dt 200a/s, v dd v (br)dss ,t j t jmax. thermal data gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the devices esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit v ds drain-source voltage (v gs =0) 600 v v dgr drain-gate voltage (r gs =20k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 0.25 a i d drain current (continuous) at t c = 100c 0.16 a i dm ( ) drain current (pulsed) 1 a p tot total dissipation at t c = 25c 2w derating factor 0.016 w/c v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k w) 800 v dv/dt (1) peak diode recovery voltage slope 4.5 v/ns t j t stg operating junction temperature storage temperature -55to150 -55to150 c c rthj-amb thermal resistance junction-ambient max 62.5 c/w symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v
3/8 sts1NK60Z electrical characteristics (t case =25c unless otherwise specified) on/off dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =1ma,v gs = 0 600 v i dss zero gate voltage drain current (v gs =0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds =0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds =v gs ,i d =50a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs =10v,i d = 0.4 a 13 15 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =v , i d = 0.4 a 0.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v,f=1mhz,v gs =0 94 17.6 2.8 pf pf pf c oss eq. (3) equivalent output capacitance v gs =0v,v ds = 0v to 480v 11 pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =300v,i d = 0.4 a r g = 4.7 w v gs =10v (resistive load see, figure 3) 5.5 5 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =480v,i d = 0.8 a, v gs =10v 4.9 1 2.7 6.9 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 300v, i d = 0.4a r g =4.7 w v gs =10v (resistive load see, figure 3) 13 28 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =480v, i d = 0.8a, r g =4.7 w, v gs = 10v (inductive load see, figure 5) 28 12.5 48 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 0.25 1 a a v sd (1) forward on voltage i sd = 0.25a, v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 0.8 a, di/dt = 100a/s v dd =20v,t j = 150c (see test circuit, figure 5) 140 224 3.2 ns nc a
sts1NK60Z 4/8 static drain-source on resistance thermal impedance safe operating area transfer characteristics output characteristics transconductance
5/8 sts1NK60Z source-drain diode forward characteristics normalized on resistance vs temperature gate charge vs gate-source voltage capacitance variations normalized gate threshold voltage vs temp. normalized bvdss vs temperature
sts1NK60Z 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/8 sts1NK60Z dim. mm inch min. typ. max. min. typ. max. a1.750.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.019 c1 45 (typ.) d 4.8 5.0 0.188 0.196 e 5.8 6.2 0.228 0.244 e1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.14 0.157 l 0.4 1.27 0.015 0.050 m0.60.023 s 8 (max.) 0016023 so-8 mechanical data
sts1NK60Z 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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